Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heating Conditions
نویسندگان
چکیده
Cristina H. Amon Fellow ASME Raymond Lane Distinguished Professor Mechanical Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213; Faculty of Applied Science and Engineering, University of Toronto, Toronto, Ontario M5S 1A4, Canada e-mail: [email protected] Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heating Conditions
منابع مشابه
Temperature - Dependent Thermal Conductivity of Single - Crystal Silicon Layers in SOI Substrates
Self heating diminishes the reliability of silicon-on-insulator (SOI) transistors, particularly those that must withstand electrostatic discharge (ESD) pulses. This problem is alleviated by lateral thermal conduction in the silicon device layer, whose thermal conductivity is not known. The present work develops a technique for measuring this property and provides data for layers in wafers fabri...
متن کاملPhysics-based and compact models for self-heating in high-speed bipolar integrated circuits
Bipolar transistors are extremely sensitive to temperature variations. Moreover, the adoption of advanced isolation techniques such as silicon-on-insulator (SOI) and deeptrench isolation (DTI) to increase device speed also dramatically increases self-heating, due to the poor thermal conductivity of silicon dioxide. In many cases, an estimate of self-heating is needed before fabrication. However...
متن کاملSimulation of nonequilibrium thermal effects in power LDMOS transistors
The present work considers electrothermal simulation of LDMOS devices and associated nonequilibrium effects. Simulations have been performed on three kinds of LDMOS: bulk Si, partial SOI and full SOI. Differences between equilibrium and nonequilibrium modeling approaches are examined. The extent and significance of thermal nonequilibrium is determined from phonon temperature distributions obtai...
متن کاملTransient electro-thermal characterization of Si–Ge heterojunction bipolar transistors
0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.04.015 ⇑ Corresponding author. E-mail address: amit-kumar.sahoo@ims-bordeaux In this paper, a comprehensive evaluation of the transient self-heating in microwave heterojunction bipolar transistors (HBTs) have been carried out through simulations and measurements. Three dimensional thermal TCAD simulations hav...
متن کاملThermal Boundary Resistance Measurements Using a Transient Thermoreflectance Technique
A transient thermoreflectance technique, using a 200-fs laser pulse, is demonstrated as a nondestructive method for measuring the thermal boundary resistance between a thin metallic film and dielectric substrate. Experimental results are presented for Au deposited on silicon and silicon dioxide substrates taken at room temperature and compared to a thermal model. The relevant thermal properties...
متن کامل